Epitaxial GaN on Sapphire Structures (2" wafers)

Reference	Specification	Producer	Packing	Comments
undoped GaN	GaN layer thickness up to 8um	Poland	1
n-type GaN	GaN layer thickness up to 8um	Poland	1
p-type GaN	GaN layer thickness up to 1.5um	Poland	1
semi-insulating GaN	GaN layer thickness up to 4um	Poland	1
HEMT structures	HEMT structure	Poland	1
LED structures	LED structure (395-440nm wavelength)	Poland	1

Epitaxial GaN on bulk GaN Structures (1", 1.5" and 2" wafers)

Reference	Specification	Producer	Packing	Comments
n-type GaN	GaN on bulk GaN	Poland	1
p-type GaN	GaN on bulk GaN	Poland	1
semi-insulating GaN	GaN on bulk GaN	Poland	1
LED strutures	LED structures (405nm-430nm wavelength)	Poland	1
HEMT structures	HEMT structures semi-insulating GaN	Poland	1

Epitaxial GaN on SiC Structures (2" wafers)

Reference	Specification	Producer	Packing	Comments
n-type GaN	GaN on n-type or semi-insulating SiC	Poland	1
p-type GaN	GaN on n-type or semi-insulating SiC	Poland	1
semi-insulating GaN	GaN on n-type or semi-insulating SiC	Poland	1

Epitaxial GaN on Silicon Structures (2" wafers)

Reference	Specification	Producer	Packing	Comments
undoped GaN	up to 1.2um GaN on Silicon substrate (111)	Poland	1

Epitaxial SiC on SiC Structures (2" wafers)

Reference	Specification	Producer	Packing	Comments
n-type SiC on SiC	n-type SiC layer (doped with Nitrogen)	Poland	1
p-type SiC on SiC	p-type SiC layer (doped with Aluminium)	Poland	1
undoped SiC on SiC	undoped SiC layer	Poland	1
Schottky diode	Schottky diode structure	Poland	1
PIN diode	PIN diode structure	Poland	1
JFET	JFET structure	Poland	1
MISFET	MISFET structure	Poland	1

Epitaxial AlN on SiC Structures (2" wafers)

Reference	Specification	Producer	Packing	Comments
undoped AlN on SiC	undoped AlN on SiC	Poland	1

Epitaxial Graphene on SiC Structures (up to 20mm x 20mm wafers)

Reference	Specification	Producer	Packing	Comments
Graphene	Graphene on n-type SiC	Poland	1
Graphene	Graphene on semi-insuling SiC	Poland	1

Epitaxial InAlGaAs on GaAs Structures (2" wafers)

Reference	Specification	Producer	Packing	Comments
GaAs on GaAs	n-type, p-type and semi-insulating GaAs on GaAs	Poland	1
InGaAsP/GaAs	InGaAsP/GaAs (typically latice-matched)	Poland	1
AlAs/GaAs	AlAs/GaAs	Poland	1
InAs/GaAs quantum dots	InAs/GaAs quantum dots	Poland	1
GaAsP	GaAsP (typically strained)	Poland	1
InGaAlP	InGaAlP (typically latice-matched)	Poland	1
InGaP/GaAs	InGaP/GaAs (typically latice-matched)	Poland	1
AlGaAs/GaAs QW	AlGaAs/GaAs QW edge emitting lasers (680 - 870nm)	Poland	1
AlGaAs/GaAs VCSELs	AlGaAs/GaAs VCSELs	Poland	1
AlGaAs/GaAs HEMTs	AlGaAs/GaAs HEMTs	Poland	1
AlGaAs/GaAs varactors	AlGaAs/GaAs varactors	Poland	1
GaAsP/GaAs lasers	GaAsP/GaAs strained QW edge emitting lasers	Poland	1
InGaAsP/GaAs lasers	InGaAsP/GaAs QW lasers 808nm	Poland	1
InGaAs/AlGaAs/GaAs lasers	InGaAs/AlGaAs/GaAs strained QW lasers 800-1000nm	Poland	1
InGaAs/GaAs QD lasers	InGaAs/GaAs and InAs/GaAs QD lasers	Poland	1
AlGaAs/GaAs waveguides	AlGaAs/GaAs passive waveguides	Poland	1

Epitaxial InAlGaAsP on InP Structures (2" wafers)

Reference	Specification	Producer	Packing	Comments
InP on InP	n-type, p-type and undoped InP on InP	Poland	1
InGaAs/InP	InGaAs/InP (typically latice-matched)	Poland	1
InGaAsP/InP	InGaAsP/InP (typically latice-matched)	Poland	1
InAlAs/InP	InAlAs/InP (typically latice-matched)	Poland	1
InAlGaAs/InP	InAlGaAs/InP (typically latice-matched)	Poland	1
InGaAsP/InP QW lasers	InGaAsP/InP QW edge emitting lasers and SOAs 1300-1600nm	Poland	1
InGaAs/InP lasers 1550nm	InGaAs/InP edge emitting lasers 1550nm	Poland	1
InGaAsP/InP VCSEL	InGaAsP/InP VCSEL structures	Poland	1
InAlGaAs/InP VCSEL	InAlGaAs/InP edge emitting and VCSEL structures	Poland	1
InGaAsP/InP	InGaAsP/InP passive devices	Poland	1
InP - based photodetectors	InP - based photodetectors	Poland	1
InAlAs/InGaAs/InP HEMTs	InAlAs/InGaAs/InP HEMTs	Poland	1