Seen Distribution - Advanced Technologies is a fabless provider of customized epitaxy semiconductor structures for R&D laboratories in the world. We cooperate with the leading epitaxy laboratories and substrate providers in Poland out of which most of them possess more than 20 years of relevant experience.

We offer custom made epitaxy structures of GaN, AlGaN, AlN, GaAs, InP, InAs and GaP grown on different semiconductor substrates such as sapphire, bulk GaN, silicon and SiC. Our most comprehensive offer within the region allows our clients to conduct sophisticated comparative studies.

We have access to the best quality GaN in the world with dislocation density of 10⁴/cm², both n-type and Semi-Insulating type (resistivity 10⁹ – 10¹² om*cm.)

Thanks to our partners having an extended experience in working with the above GaN we offer:

• very high quality epi-ready homoepitaxial templates GaN on GaN - such structures, as oppose to stand alone substrates, allow for true inspection of nitride substrate quality and thus a subsequent full control of the whole epitaxy process.
• complete epitaxial structures of high brightness light emitting diodes, and high electron mobility transistors of best world standard parameters.
• all combinations of InAlGaN structures and devices on bulk GaN.

Our offer includes:

• high quality heteroepitaxial AlGaN/GaN templates on sapphire, SiC and silicon.
• AlGaN/GaN/sapphire detectors, high quality HEMTs structures on sapphire, and SiC,
• sophisticated devices on SiC such as: Schottky diodes, PIN diodes, JFET, MISFET as well
• free standing epitaxy graphene deposed on SiC substrate.

We offer a combination of high quality and competitive prices!

Our clients include the most technologically advanced world-wide corporations and famous universities.

Please see our most typical structures for sale.